| 초록 |
We present an air-stable n-, p-type doping process which improves work function and conductivity of graphene at the same time. Our novel p-type doping process exhibited strong p-type doping of graphene that reduced about 70% of sheet resistance and increased the surface work function about 1.0 eV of pristine graphene. Our n-type doping also exhibited strong n-type doping effect which shifts the Dirac point to around -140 V and an enhanced electron mobility of 1150 cm2 V-1 s-1 in graphene field effect transistors. Furthermore, the graphene sheet doped with our n-,p-type doping process showed stable electrical properties in a month under ambient conditions which demonstrates air-stability of our doping processes. |
