| 초록 |
Graphene has been regarded as a replacement of conventional indium-tin oxide (ITO) due to its unique electrical, mechanical and optical properties. However, due to its low work function (WF) and high sheet resistance (Rsh), WF and Rsh of graphene have to be modified for practical replacement of ITO in electrodes. Here, we developed stable graphene p-type doping process to modify the WF and Rsh. Polymer doped graphene showed 40.2 % decrease of Rsh and 1.1 eV increase of WF. Graphene doping with polymer showed superior stability under thermal and chemical treatment and it was retained without significant changes under ambient conditions. We applied the polymer doped graphene as an anode of organic light-emitting diodes (OLEDs). OLEDs with polymer doped graphene exhibited decreased operating voltage and increased luminous efficiencies compared to the OLEDs with pristine graphene. These results indicate that polymer doped graphene is promising anode in organic opto-electronics. |
