| 초록 |
Remarkable advances in the performances of organic field-effect transistors(OFETs) in recent year. However, the bias stress stability in OFETs remains important obstacle for commercial use. The microstructural origins of charge traps inside OFET devices are not yet clearly understood, and investigating these origins presents an important issue. The unique electrical properties of an n-type semiconducting polymer, poly[[N,N’-bis(2-octyldodecyl)-naphthalene-1,3,4,8-bis(dicarboximide)-2,6-diyl]-alt5,5’(2,2’bithiophene)](P(NDI2OD-T2)) were explored to study the correlation between the molecular orientation and the bias stress stability of an OFET. Although the charge carrier mobilities each devices may be similar, the bias stress stabilities quite a differ according molecular orientation. A higher degree of bias stress stability was attained in the P(NDI2OD-T2)FETs prepared with face-on thin-film structures compared to the edge-on film structures. |
