| 초록 |
Cu(In,Ga)Se2 (CIGS) has emerged as one of the most promising material candidates for thin film solar cells, since its energy conversion efficiency has reached over 20%. The CIGS solar cells consist of several materials and have polycrystalline forms, and hence characterizations and improvement of their device characteristics are difficult and complicated. In particular, identification of the major defects is a very crucial step to improve the carrier collection probability in the photovoltaic devices, since the trap-mediated recombination is known to be the most dominant process in CIGS thin films. In this talk, several experimental techniques to characterize the recombination processes in the CIGS solar cells will be discussed. Also, some exemplary researches will be introduced and they will clearly provide insights into the realization of the high efficiency CIGS thin film solar cells. |
