| 학회 |
한국재료학회 |
| 학술대회 |
2013년 봄 (05/23 ~ 05/24, 여수 엠블호텔(THE MVL)) |
| 권호 |
19권 1호 |
| 발표분야 |
A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 |
Characteristics of self-forming barrier using Cu-Mn alloy and Cu-V alloy on low-k samples |
| 초록 |
We investigated the influence of annealing on the diffusion barrier property in a Mn-based and V-based barrier layer on low-k samples. The Cu alloy/low-k/Si structures were annealed at various temperatures for 1 h in vacuum. X-ray diffraction revealed Cu (111), Cu (200) and Cu (220) peaks for the Cu-Mn and Cu-V alloys. Self-formed interlayers were examined by transmission electron microscopy, but interlayers were not clearly showed both Mn and V. To determine the barrier characteristic of self-formed interlayers, electrical properties of Cu alloy/low-k/Si structures were evaluated by thermal stability measurement. Moreover, XPS measurement was carried out to determine chemical composition of self-formed interlayer after copper reverse plating process. The results show that Mn and V based Cu alloys are suitable seed layer materials for Cu interconnects. |
| 저자 |
박재형, 박종완, 한동석, 강유진, 신소라
|
| 소속 |
한양대 |
| 키워드 |
copper interconnect; vanadium; manganese; self-forming barrier
|
| E-Mail |
|
