| 학회 |
한국재료학회 |
| 학술대회 |
2019년 봄 (05/15 ~ 05/17, 평창 알펜시아 리조트) |
| 권호 |
25권 1호 |
| 발표분야 |
F. 광기능/디스플레이 재료 분과 |
| 제목 |
Study on the charge transfer in metal-insulator-oxide semiconductor diodes through defect engineering of insulator |
| 초록 |
A precise analysis of the electrical charge transport mechanism through an insulator is essential for advanced electronic application devices such as next-generation memories based on resistance differences, PEC (PhotoElectoChemical) water splitting devices and so on. Herein, we have demonstrated the conduction mechanism in MIOS (Metal/Insulator/Oxide Semiconductor) diodes via a defect engineering of the insulator. The MIOS diode rectification of the P++-Si anode/Al2O3/IGZO cathode reached 107 at 1.8 V and considerably suppressed the leakage current by selectively generating the oxygen vacancies in the insulator. Studies of the current-voltage characteristics of MIOS diodes shows that the charge carrier transport mechanism can be varied depending on not only the defect density but also the difference between the CBM (conduction band minimum) of the semiconductor and the oxygen vacancy energy level of the insulator. |
| 저자 |
이동근, 박준우, 김연상
|
| 소속 |
서울대 |
| 키워드 |
MIOS diode; insulator defect engineering; working pressure; charge transfer mechanism; IETS
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| E-Mail |
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