| 학회 |
한국고분자학회 |
| 학술대회 |
2011년 가을 (10/06 ~ 10/07, 김대중 컨벤션센터) |
| 권호 |
36권 2호 |
| 발표분야 |
기능성고분자－막분리용 고분자 |
| 제목 |
Triphenylsulfonium Triflate Bound- and Blended-Polymer Resists for Electron Beam Lithography |
| 초록 |
Photoacid generator (PAG) is an essential component for chemically amplified polymer resist due to its high sensitivity and its lithographic performance. The PAG bound polymer resist is the best candidate for solving the problems such as PAG aggregation and acid migration with the use of PAG blended resist. In this work, triphenylsulfonium triflate moiety as a PAG was bound in the main polymer backbone for the synthesis of triphenylsulfonium salt methylmethacrylate (TPSMA), which was subsequently terpolymerized with glycidylmethacrylate (GMA) and methylmethacrylate (MMA) for a new PAG bound polymer resist. PAG bound- and blended-terpolymer resists were employed to e-beam lithography in order to compare the advancement of lithography capability. The properties of line width roughness (LWR), line edge roughness (LER), and sensitivity were significantly improved by using the PAG bound resist. |
| 저자 |
권오정, 김민정, 손경화, 강하나, 김은광, 이해원
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| 소속 |
한양대 |
| 키워드 |
Photoacid generator (PAG); Triphenylsulfonium salt methacrylate (TPSMA); electron beam lithography; PAG bound polymer resist
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| E-Mail |
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