| 학회 | 한국재료학회 |
| 학술대회 | 2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 | 23권 2호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Photoelectrochemical property of Fe2O3 thin film grown by using modified chemical bath deposition method |
| 초록 | In this study, Fe2O3 thin film photoelectrode was grown at various growth temperatures (145, 160, 175, 190, 205, 220 ℃) by using modified chemical bath deposition (M-CBD) method. The morphological, structural, electrical and photoelectrochemical properties of the Fe2O3 thin film photoelectrode with using two types of buffer layers (spin coating and electrochemical deposition) were investigated. As a result, the maximum photocurrent density (0.53 mA/cm2 at 0.5 V vs. SCE) was obtained from the sample grown at a temperature of 190 ℃, which has the highest thickness, crystallinity, and flat band potential. Through this study, it was found that the photoelectrochemical properties were complexly influenced by things such as the morphological, structural, and electrical properties. |
| 저자 | 홍예진, 류혁현 |
| 소속 | 인제대 |
| 키워드 | Fe<SUB>2</SUB>O<SUB>3</SUB>; buffer layer; growth temperature; photoelectrochemical; photocurrent density |
