| 학회 | 한국재료학회 |
| 학술대회 | 2015년 가을 (11/25 ~ 11/27, 부산 해운대그랜드호텔) |
| 권호 | 21권 2호 |
| 발표분야 | C. 에너지 재료 |
| 제목 | Cu2SnS3 (CTS) Thin Films Formed By Rapid Thermal Annealing of Direct Precursor Solution Coatings |
| 초록 | Cu2SnS3 (CTS) has attracted significant attention as a next generation promising absorber material in thin film solar cells (TFSCs) due to the high natural abundance, low-cost and non-toxicity of constituents, high absorption coefficient (104 cm-1) and direct band gap energy in between 0.9 to 1.7 eV. To address the issue of expensive and complicated vacuum based deposition processes, the non-vacuum solution processing is an attractive and promising way for the fabrication of high quality CTS absorber layers. The solution processing offers high throughput, efficient use of materials and suitability for use in large area substrates. Here, we present a simple direct solution coating process for fabrication of CTS absorber layers, employing a low-cost and environmentally friendly precursor solution. The precursor solution was prepared by mixing all metal salts in mixed solution of ethanol and ethanolamine. This facile precursor solution formation enables a rapid and easy processing and the high precursor solution stability in air, which further ensures the film deposition in ambient conditions without a glove box. Here, we demonstrate the fabrication of high quality CTS absorber layer with a thickness of ~ 1 μm and micrometer-scaled grains using air-stable, non-toxic solvent based precursor solution approach. Our simple and environmentally friendly approach for the fabrication of CTS absorber layers represents the initial attempts towards realizing non-toxic, low-cost and efficient solar cells. |
| 저자 | Jin Hyeok Kim1, Ju Yeon Lee2, In Young Kim3, Chang Woo Hong1, Sachin A. Pawar2, Uma V. Ghorpade3, Mahesh P. Suryawanshi4 |
| 소속 | 1Optoelectronics Convergence Research Center, 2Department of Material Science and Engineering, 3Chonnam National Univ., 4Gwangju Institute of Science and Technology |
| 키워드 | CTS; RTA; Sol-Gel; Cu<SUB>2</SUB>SnS<SUB>3; </SUB>Band-gap |
