화학공학소재연구정보센터
학회 한국재료학회
학술대회 2010년 봄 (05/13 ~ 05/14, 삼척 팰리스 호텔)
권호 16권 1호
발표분야 C. Energy and the Environment(에너지 및 환경재료)
제목 Growth of 4 wt% Ga-doped epitaxial ZnO thin film on MgAl2O4 (111) substrate using hydrothermally grown ZnO buffer layer
초록 4 wt% Ga-doped epitaxial ZnO (GZO) thin films were prepared on the ZnO buffered and non-buffered MgAl2O4 (111) substrates by RF magnetron sputtering method at a low growth temperature of 250 C. The epitaxial ZnO buffer layer was deposited on a MgAl2O4 (111) substrate by hydrothermal technique using aqueous solutions of zinc nitrate hexahydrate, ammonium nitrate and ammonium hydroxide at 90 oC. The effect of a ZnO buffer layer on the crystallinity, epitaxy nature, surface morphology, optical, and electrical properties of the GZO thin films are investigated. The X-ray diffraction pattern showed that the GZO thin films grown on a buffered substrate are epitaxially grown with an orientation relationship of . The GZO thin films grown on a non-buffered substrate are polycrystalline with hexagonal wurtzite phase having highly c-axis preferred, out-of-plane orientation and random in-plane orientation. The room temperature photoluminescence spectra of the epitaxial GZO thin film grown on a buffered substrate showed sharp near band edge emission peak and lower broad deep-level emission peak than that of the polycrystalline GZO thin film grown on a non-buffered substrate. The electrical resistivity of the GZO thin film is improved from 4.69×10-3 Ωcm to 2.27×10-3 Ωcm by introducing hydrothermally deposited ZnO buffer layer.
저자 Seung Wook Shin1, Ye Bin Kwon2, Kyu Ung Sim2, Jong-Ha Moon3, Jin Hyeok Kim4, Jeong Yong Lee3
소속 1Department of Materials Science and Engineering KAIST, 2bDepartment of Materials Science and Engineering Chonnam National Univ., 3bDepartment of Materials Science and Engineering, 4Chonnam National Univ.
키워드 Transparent Conducting Oxide (TCO); Ga-doped ZnO thin films (GZO); Hydrothermal deposited ZnO buffer layer; Epitaxial growth; Low growth temperature
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