| 초록 |
In organic field-effect transistors (OFETs), polymer gate insulators (GIs) with high dielectric constant (k) are of interest for stretchable and flexible electronic device as an alternative to inorganic oxides or nitrides that have brittleness and high process temperature. A myriad of research have been focusing on the interface engineering using self-assembled monolayers (SAMs). The SAM treatment, however, is not fully understood in terms of its growth mechanism on polymer GIs. Here, we investigate the growth step of SAM at different temperatures. The growth temperature control showed various morphology transition of SAM on polymer GIs and it changed organic semiconductor growth mode as well. The DNTT FETs based on polymer GIs were performed with mobility as high as 1.6 cm2/Vs, and it is attributed to the packing density and orientation difference of SAMs depending on the growth environment. The work would be a trigger for extensive research of OFETs based on polymer gate dielectrics. |
