| 초록 |
Organic field-effect transistors (OFETs) have received considerable interest in recent years, and intensive studies have made it possible to achieve device performances comparable to those of amorphous silicon transistors. However, OFETs often suffer from high operating voltage due to the low charge carrier mobility of organic semiconductors. Hence, for the applications that require high field-induced current at low voltage, OFETs are still not the suitable candidate. Since the field-induced current density is proportional to the capacitance of gate dielectric, the way to increase field induced current density is to use high dielectric constant materials as a gate dielectric or to reduce the thickness of gate dielectric. Therefore, we use amorphous polymer with high dielectric constant (k~12) as a gate dielectric. |
