| 학회 |
한국재료학회 |
| 학술대회 |
2008년 봄 (05/22 ~ 05/23, 상록리조트) |
| 권호 |
14권 1호 |
| 발표분야 |
반도체재료 |
| 제목 |
Influence of GaAs/InGaAs strained superlattices on photoluminescence of InAs quantum dots |
| 초록 |
The effects of GaAs/InGaAs strained superlattices on optical properties of InAs quantum dots (QDs), which were grown by a molecular beam epitaxy (MBE), were investigated by photoluminescence (PL) spectroscopy. The PL peak positions of the InAs QDs were red-shifted by increasing the In composition of the strained superlattice layers. For the InAs QDs embedded in GaAs/In0.1Ga0.9As superlattice layers, the full width at half maximum (FWHM) of the PL peak is 33 meV. The effects of the rapid thermal annealing (RTA) on the optical properties of the InAs QDs with In mole fraction x = 0.1 of the superlattice were also investigated by PL measurements. The PL spectra from the InAs QDs showed blue-shift with increasing annealing temperature. The blueshift of the PL peak after annealing treatment is generally attributed to intermixing at the interface between QDs and barrier layer. An obvious broadening of the FWHM of the PL peak is observed from 33 meV for the as-grown sample to 51 meV for the sample annealed at 700 ℃, then the FWHM decrease with increasing annealing temperature. However, the FWHM of the sample annealed even at 800 ℃ is larger than that of as-grown sample despite decrease in the linewidth of PL spectra because the as-grown sample is relatively uniform QDs. A minimum FWHM of 27 meV appears at 850 ℃, which is smaller than that of the as-grown sample, indicates improvement in the size uniformity of QDs. |
| 저자 |
Do Yeob Kim1, Min Su Kim2, Ho Jin Park3, Goon Sik Kim1, Hyun Young Choi2, H. H. Ryu3, Minhyon Jeon1, Guan Sik Cho2, Jong Su Kim3, Jin Soo Kim1, D.Y. Lee2, J.S. Son3, J. Y. Leem1
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| 소속 |
1School of Nano Engineering, 2Institute of Nano Manufacturing, 3Inje Univ. |
| 키워드 |
Annealing; Photoluminescence; Molecular beam epitaxy; Superlattices; Quantum dots
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| E-Mail |
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