| 학회 | 한국재료학회 |
| 학술대회 | 2009년 봄 (05/21 ~ 05/22, 무주리조트) |
| 권호 | 15권 1호 |
| 발표분야 | 전자재료 |
| 제목 | Electron beam irradiation effect on dielectric properties of Cu/SiO2/p-Si (MOS) structure |
| 초록 | Semiconductor devices used in outer space are required to operate in strongly ionizing radiation fields and in high temperature. The gamma ray, electrons, neutrons and ions irradiation effect on the semiconductor devices such as MS, MIS, MOS and solar cells are technological and scientific interest for the future. There are two important effects of radiation: the transient and permanent effects are due to the electron-hole pair generation and permanent effect is due to the bombardment of devices with radiation which cause changes in the crystal lattice. In this study, we fabricated MOS semiconductor device Cu/SiO2/Si structure. SiO2 layer was deposited on Si wafer (p-type) with 200 nm thickness. The electron beam was irradiated on these samples, 100, 200, 300 kGy with 1.14 MeV and 7.46 mA. After then the upper electrode of Cu was deposited with shadow mask 1.2 cm diameters. The dielectric property variations of the electron beam irradiations on these samples were analyzed using an impedance analyzer from 100 kHz to 1 MHz. |
| 저자 | 김현빈, 전준표, 강필현 |
| 소속 | 한국원자력(연) |
| 키워드 | MOS; electron beam radiation; dielectrics |
