| 학회 |
한국재료학회 |
| 학술대회 |
2021년 가을 (11/24 ~ 11/26, 경주 라한호텔) |
| 권호 |
27권 2호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
GaN growth with hole-patterned masking layer using MOCVD |
| 초록 |
The prior research on growth of GaN nanorod using metal-organic chemical vapor deposition (MOCVD) has been studied by using masking layers like Ti. The masking layer inhibits the growth of GaN epi-layer while homo-, or hetero-epitaxy takes place on mask-free layer. There are various kinds of materials that can be used as masking layer like SiO2, SiNx, CrN, and TiN. Among those materials, Ti can easily be fabricated by thermal evaporation. We figured out the thin Ti layer with hole patterns by photolithography works as a masking layer that blocks the GaN growth. The morphology of the GaN grown on GaN or AlN has been analyzed and the crystallinity of the GaN has been confirmed with x-ray diffraction. |
| 저자 |
심규연, 안민주, 강성호, 김효종, 김화영, 변동진
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| 소속 |
고려대 |
| 키워드 |
GaN; Ti mask; Photolithography
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| E-Mail |
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