| 학회 |
한국고분자학회 |
| 학술대회 |
2019년 가을 (10/09 ~ 10/11, 제주컨벤션센터) |
| 권호 |
44권 2호 |
| 발표분야 |
분자전자 부문위원회 I (영어발표) |
| 제목 |
Bias-Stress-Induced Charge Trapping in Organic Transistors–A Molecular Structure Perspective |
| 초록 |
Operational instability of organic field-effect transistors (OFETs) is one of the most critical obstacles to their practical use and commercialization. Prolonged operation of OFETs under an applied bias can cause a significant drop in the channel current and a continuous shift in the threshold voltage, which prohibit the normal operation of an electronic device. The bias-stress-driven electrical instabilities are attributed to charge carrier trapping inside the device. In this talk I will discuss the challenges and our progresses in understanding of charge trapping phenomena in OFETs. Especially, I will overview the recently reported polymer semiconductors with high charge mobility yet low crystalline ordering, and present our recent results on bias-stress induced charge trapping for this type of polymer semiconductors. |
| 저자 |
조길원 |
| 소속 |
포항공과대 |
| 키워드 |
Organic transistor; Bias-stress stability
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| E-Mail |
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