| 초록 |
One of the important factors to improve the performance of organic field-effect transistors (OFETs) is an effective charge carrier injection from the metal electrode to organic semiconducting layer, and thus various studies have been conducted so far to improve this. In this study, the organic semiconducting layer was formed by blending the thiol SAM materials with PBTTT-C14 solution to control the nature of the charge carrier injection in the top-contact bottom gate (TCBG) structure of the OFETs, for which a spontaneously generated SAM was produced through annealing process on the electrodes. This result is simple and applicable on the TCBG-structured OFETs, which is impossible to be applied with SAM treatment until now. The field-effect mobility of PBTTT-C14 FETs blended with 1-dodecanethiol was improved from 0.025 to 0.063 cm2/Vs as compared to that without blending, and the threshold voltage was shifted from 15 to 0 V, which is closed to an ideal onset operation of the device. |
