| 학회 | 한국재료학회 |
| 학술대회 | 2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 | 23권 2호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Enhanced Nucleation of High-k Dielectric Films using Atomic Layer Deposition on Graphene |
| 초록 | Graphene is a 2-dimensional material that consists of carbon atoms. Graphene received attention to a new channel material because of unique energy band structure, high thermal conductivity and high electron mobility (~20000 cm²/V∙s) at room temperature. In order to use the graphene as a top-gated transistor channel material, a growth of high-k oxide film is essential on graphene. However, it is difficult to deposit oxide films on the graphene using atomic layer deposition (ALD), since there are no hydroxyl groups(-OH) enough to deposit a full high-k thin film on the graphene. Here, we propose a simple and convenient method for a deposition of Al2O3, HfO2 films on the graphene using a graphene surface treatment prior to the growth of Al2O3, HfO2 films by ALD. The graphene surface treatment was performed by using trimethylaluminium and H2O that are typical metal precursor and oxygen source in the ALD process. Current-voltage (I-V) curves of the Au/Al2O3/graphene and Au/HfO2/graphene samples exhibited substantially lower leakage current with the graphene surface treatment compared to those without the surface treatment. The leakage current was decreased by a factor of ~ 105 with the surface treatment, implying an important role of the surface treatment in the growth of Al2O3 and HfO2 films on the graphene. Dielectric constants were estimated to 10.09 and 13.98 for Al2O3 and HfO2 films grown on graphene samples, respectively. |
| 저자 | Soo Bin Kim1, Kang Min Lee2, Hyeok Jae Lee3, Sang Woon Lee2 |
| 소속 | 1Department of Energy Systems Research, 2Ajou Univ., 3Department of Physics |
| 키워드 | High-k dielectric; Atomic Layer Deposition; Graphene; Al2O3; HfO2 |
