| 초록 |
We describe a facile route to fabricating thin ferroelectric poly(vinylidene fluoride) (PVDF)/poly(methylmethacrylate) (PMMA) blend films with very low surface roughness based on spin coating and subsequent melt-quenching. Amorphous PMMA in a blend film effectively retards the rapid crystallization of PVDF upon quenching, giving rise to a thin and flat ferroelectric film with nanometer scale type PVDF crystals. The still, flat interfaces of the blend film with metal electrode and/or the organic semi-conducting channel layer enable us to fabricate a highly reliable ferroelectric capacitor and transistor memory unit operating at the voltage as low as 15V. For instance, with TIPS-pentacene single crystal as an active semi-conducting layer, a flexible ferroelectric field effect transistor shows a clockwise I-V hysteresis with a drain current bistablility of a 103 and data retention time of more than 15 hours at ±15V gate voltage. |
