| 학회 |
한국고분자학회 |
| 학술대회 |
2008년 가을 (10/09 ~ 10/10, 일산킨텍스) |
| 권호 |
33권 2호 |
| 발표분야 |
분자전자소재 및 소자기술의 현황(분자전자 부문위원회) |
| 제목 |
Downscaling of self-aligned, all-printed polymer thin-film transistors |
| 초록 |
Printing is an emerging approach for low-cost, large-area manufacturing of electronic circuits, but it suffers from poor resolution, large overlap capacitances, and film thickness limitations resulting in slow circuit speed and high operating voltages. In the presentation, I will talk about how we can achieve perfect downscaling polymer transistors by inkjet printing methods. A self-aligned printing approach that allows downscaling of printed organic thin-film transistors to channel lengths of 100 400 nm. The use of a cross-linkable polymer gate dielectric with 30-50 nm thickness ensures operating voltages are below 5 V.T he device architecture minimizes contact resistance effects enabling clean scaling of transistor. A self-aligned gate configuration minimizes the parasitic overlap capacitance to low values of down to 0.2-0.6 pF/mm and provides a significant improvement of transistor switching speed over 1.5 MHz. |
| 저자 |
노용영 |
| 소속 |
한국전자통신(연) |
| 키워드 |
Organic thin film transisotor; ink jet printing
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| E-Mail |
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