| 학회 |
한국재료학회 |
| 학술대회 |
2019년 봄 (05/15 ~ 05/17, 평창 알펜시아 리조트) |
| 권호 |
25권 1호 |
| 발표분야 |
A. 전자/반도체 재료 분과 |
| 제목 |
Low current, Self-current-compliance and multi-bit operation in Ti doped Al2O3 RS layer. |
| 초록 |
Ti doped Al2O3 (Ti:Al2O3) thin film was investigated for self-rectifying resistive switching (RS) memory cell in this study. The fabricated RS device device exhibited low operational current of sub- 1μA, highly reliable retention and endurance characteristics. Moreover, electrical pulse based RS operation was also observed stably due to the self-current-compliance characterisitc of the RS device. The Ti concentration in Ti:Al2O3 layer and stacked oxygen reservoir layer have a crucial role for reducing operational voltage and self-current-compliance characterisitic, respectively. To reveal the microscopic origin of the behavior of the RS device, various physical and chemical analysis were performed. The detailed analysis results and device fabrication process will be presented in conference. Finally, multi-bit operation of the given RS device was also performed, which demonstrates the Ti:Al2O3 can be a strong candidate fou future non-volatile memory application. |
| 저자 |
Kanghyeok Jeon1, Gun Hwan Kim2
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| 소속 |
1Division of Advanced Materials, 2Korea Research Institute of Chemical Technology (KRICT) |
| 키워드 |
Low current; self-current-compliance; multi-bit operation
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| E-Mail |
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