| 초록 |
Ge doped Cu2ZnSnSe4 (CZTSe) thin films were deposited on Mo coted glass. The Ge nanolayers 5nm (a) ,10 nm (b), 15nm (c), 20 nm (d) were deposited by using RF sputtering. The stacked precursors were pre-heated using a tube annealing system in Ar atmosphere at 300℃ for 1 hour and these were annealed sequentially using rapid thermal annealing system with selenium powder at 520℃ and inital pressure at 800 Torr for 7.5 min. To identify the effect of Ge nanolayer with different thickness, we combined the results of X-ray diffraction, Ramna spectroscopy and FE-Scanning electron microscope. We studied how different of Ge nanolayer affect the crystallization, formation of phase and electrical properites on kesterite solar cells. |
