| 초록 |
Nanostructures of CN-based material were fabricated by surface treatments and plasma enhanced chemical vapor deposition (PECVD). Amorphous CNX thin films grown on Si (100) wafer by PECVD at room temperature were first treated by H2 plasma and then annealed at 200-300℃. Moreover, SiCN nanometric powder was synthesized at room temperature and 300℃ in rf discharges of SiH4-Ar-CH4-N2 gas mixture. The effects of surface treatments on structural and optical properties of the CN-based nanostructures were investigated by PL, FT-IR, EDS, AES, AFM, and XRD. Well-defined nanodots and nanostripes were formed depending on temperature and plasma-treatment time. The PL spectra showed that the band-gap energy of the films is between 1.9 and 2.1eV. The FT-IR spectra showed the presence of Si-N peak at 430 cm-1, Si-C peak at 910-1010cm-1, C-N peak at 1260 cm-1, C=N peak at 1640-1670 cm-1, respectively. The EDS and AES analysis showed that the CNX consists of 90 at. % C and 9 at. % N, and SiCN has 82 wt. % Si, 9wt. % C, 6 wt. % N, and 2 wt.% O. |
