| 학회 |
한국화학공학회 |
| 학술대회 |
2011년 봄 (04/27 ~ 04/29, 창원컨벤션센터) |
| 권호 |
17권 1호, p.708 |
| 발표분야 |
재료 |
| 제목 |
Interfacial and electrical properties of solution processed Ni-doped p-Type TiO2 in bipolar and transistor devices |
| 초록 |
Interfacial and electrical properties of Ni2+-doped TiO2 thin films were studied.X-ray photoelectron spectroscopy (XPS) indicated the influence of Zn+2 ions on the local chemical environment of Ti atoms. The p-type conductivity of the Ni2+:TiO2 was confirmed from the current-voltage relations of Ag/ZnO/Ni2+:TiO2 bipolar and Ag/ZnO/NiO/Ni2+:TiO2/Si field effect transistor (FET) devices. The performance of FET was examined as a function of temperature and evaluated in terms of mobility (), hole diffusion coefficient (Dh) and sub-threshold swing (SS). The and Dh were 0.1-2.9 cm-2V-1s-1 and 10-3-10-1 cm2s-1, respectively and SS was comparable to a back-gated silicon nanowire FET at around 370-680 mV per decade. |
| 저자 |
Soumen Das, 김진환, 최한석, 박용규, Da-an Liu, 한윤봉
|
| 소속 |
전북대 |
| 키워드 |
Ni-doped TiO2; p-type TiO2; FET
|
| E-Mail |
|
| VOD |
VOD 보기 |
| 원문파일 |
초록 보기 |
