| 학회 | 한국재료학회 |
| 학술대회 | 2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 | 23권 1호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Control the electrical characteristics of SnS2 field-effect transistors by using fluorine doping |
| 초록 | Development of simple and predictable doping methods to transition metal dichalcogenides (TMDs) is crucial for more suitable electronic applications. However, conventional diffusion doping and ion implantation are not preferable because they cause damage to electronic characteristics and atomic structure of TMDs. Recently, Xia et al. reported that substituting S atoms with group VII atoms (F, Cl, Br, or I) could be a way to dope n-type carriers in SnS2 [1]. Their results revealed that the F atom is the most promising n-type dopant to SnS2 because of its large negative formation energy compared to other elements. In this work, fluorine doping was applied to the back-gated SnS2 field effect transistors (FET) by low-power CF4 plasma treatment using reactive ion etching (RIE). Our results showed that electrical parameters such as threshold voltage and hysteresis of SnS2 FET can be controlled by changing time and power of RIE. References 1. C. Xia, X. Zhao, Y. Peng, H. Zhang, S. Wei, and Y. Jia, Superlattice Microstruct. 85, 664 (2015). |
| 저자 | Gunwoo Lee1, Seung-Beck Lee2, Jeongsu Lee3, Hojun Seo4, Sohee Kim5, Onejae Sul6 |
| 소속 | 1Department of Nanoscale Semiconductor Engineering, 2Hanyang Univ., 3Seoul, 4133-791, 5South Korea, 6Department of Electronic Engineering |
| 키워드 | TMDs; SnS<SUB>2</SUB>; doping; fluorine; RIE |
