| 초록 |
Two-dimensional (2D) van der Waals materials and their heterostructures, such as graphene, and transition metal dichalcogenides (TMDC) emerge as key materials for the nanoscale optoelectronics for lighting, next-generation display modules. To date, however, limited color emission spectrum (＜ 2 eV) and lack of efficient up-conversion strategy in van der Waals materials are key challenges for developments of practical 2D material-based optoelectronics in the visible range. Here, I will present the deep UV (220~390nm) electroluminescence (EL) and broadband photodetection from hBN heterostructures. Broad UV EL in hBN are attributed to the electric field induced artificial color centers, which are vacancy-related defects with an excitonic mode in the intrinsic band gap of hBN (＞ 6.4 eV). These results demonstrate the promise of hBN-based van der Waals heterostructures for light sources and optoelectronics in the UV to the visible regime. |
