| 초록 |
Transparent conducting oxide (TCO) has been widely used as gas sensors, window/buffer layers in solar cells, energy-conserving windows because of its high transparency and conductivity. Tin oxide (SnO2) is one kind of TCO materials including In2O3, ZnO, and its mixture. There are several methods to form SnO2 thin films and atomic layer deposition (ALD) is one of the most promising techniques, allowing one to obtain highly conformal films on planar and three-dimensional structures. The demand for establishing low temperature ALD SnO2 processes is high especially for the area of thermally sensitive materials such as organic light emitting diodes and photovoltaic cells. Successful low temperature growth of conducting SnO2 thin films by ALD will be presented by using newly synthesized Sn(II) precursor (1,3-bis(1,1-dimethylethyl)-4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidene) and hydrogen peroxide. Its extended application as a passivation layer for atomic oxygen and an electron transport layer will be demonstrated. |
