| 초록 |
Two-dimensional molybdenum disulfide (MoS2) have been actively studied due to interesting properties. And modification of the properties is required for various applications. Tuning properties by dopants have shown in many works, it may have many drawbacks. As a new approach, we introduce a novel doping method using self-assembled poly(styrene-b-dimethylsiloxane) BCP, where the poly(dimethylsiloxane) block is converted into rigid silica nanostructures when exposed to O2 plasma. Therefore, the silica nanostructures can protect the underlying MoS2 from Ar plasma, while exposed area is etched. Finally, nano-patterned MoS2 has the dual regions with high-density of sulfur vacancies. We fabricated field-effect transistors (FETs) to confirm the controllable electrical properties. The photoluminescence (PL) and FET analysis data suggest that generated sulfur vacancies act as n-type dopant and the carrier concentration can be finely tuned by controlling BCP pattern size and etching conditions. |
