| 학회 | 한국재료학회 |
| 학술대회 | 2012년 봄 (05/17 ~ 05/18, 무주덕유산리조트) |
| 권호 | 18권 1호 |
| 발표분야 | C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 | Epitaxial growth and characterization of Mg and Ga co-doped ZnO thin films by RF magnetron sputtering on the Al2O3(0001) substrates |
| 초록 | ABSTRACT EpitaxialMg and Ga co-doped ZnO (MGZO) thin films were prepared on Al2O3(0001) substrates by RF magnetron sputtering method with different substrate temperature from room temperatureto 650 °C. Effects of different substrate temperature on the properties of MGZO thin films were investigated. X-ray diffraction patterns and transmissionelectron microscopy studies indicated that the MGZO thin films deposited below substrate temperature of 350 °Cwere grown as a polycrystalline hexagonal wurtzite phase with a c-axis preferred, out-of-plane orientation and random in-plane orientation. However,the MGZO thin filmsdeposited at substrate temperature of 450 °C and 550 °C were epitaxiallygrown with an orientation relationship of. A typical survey XPS spectrumof the MGZO thin films confirmedthe presenceof Mg, Ga, Zn and O in the MGZO films.The MGZO thin films had a smoother surface morphology with increasing substrate temperature.The electrical and transmittanceof MGZO thin films were improved with increasing substrate temperature. Further detailedanalysisand discussion for effect of substrate temperature on the MGZO thin film will be discussed.3 2 ] 0211)[0001(|| ] 0211)[0001(O Al MGZO |
| 저자 | 김민성1, 김진혁1, 신승욱2, 김인영3, 문종하1, 이정용2, 허기석4 |
| 소속 | 1전남대, 2KAIST, 3전남재학교 신소재 공학부 전재재료 실험실, 4생산기술(연) |
| 키워드 | Epitaxial growth; TEM study; UV-LED; Quaternarymaterials; UV-emission |
