| 초록 |
Two-dimensional (2D) transition-metal dichalcogenides (TMDC) is considered as one of the promising candidates for next-generation optoelectronics. Among chemical vapor deposition (CVD), mechanical exfoliation, solution-phase chemical synthesis, liquid-phase exfoliation (LPE), and intercalation-based exfoliation methods, the solution-processable method for synthesizing 2D nanosheets offers significant potential in thin-film electronics for large-area flexible and wearable devices. Solution-processed n-type transistors (MoS2) have reached high mobility of over 10 cm2 V-1 s-1. However, the performance for the solution-processed p-type 2D transistor is still inferior. Here, we demonstrate that high performance solution processed WSe2 transistors. The optimized WSe2 transistor exhibits increased mobility up to 30 cm2 V-1 s-1 from bare devices with relatively low mobility of 10-6 cm2 V-1 s-1. Especially, the high on/off ratio of the solvent-treated WSe2 transistor increased to over 106 from 104. We will present details how we achieve high performance in the conference. |
