| 초록 |
Nowadays, the mobility of commercially used top-gate oxide TFTs is not sufficient for driving a high-resolution display. In this article, we suggest the strategy to boost the mobility of Zn-Ba-Sn-O transistors with top-gate structure. The metal-capped layer on semi-conductor can accelerate the transfer of electrons from source to drain. As the interface between the semi-conductor and dielectric layer should be excellent quality, the poly-monochloro(para-xylylene), also known as a PPx-C, was used for the dielectric layer with pinhole, defect-free by a Chemical Vapor Deposition(CVD) method. As a result, we confirmed that the mobility of the ZBTO TFTs was increased by about four times or more (~95 cm2/Vs) compared to before capping. Our group considered that the increased ZBTO TFTs mobility derived from the excellent interface and the role of Al capping layer injecting the electrons.
|
