| 학회 | 한국재료학회 |
| 학술대회 | 2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 | 22권 2호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Chemically durable oxide semiconductor films and their application for oxide thin-film transistor circuit integration |
| 초록 | Oxide semiconductors are being considered as the new channel layer for the future display with high area and response time due to high uniformity and superior mobility than silicon. In particular, In and Zn based oxide semiconductors (InGaZnO, InZnO, InO, and ZnO) are considered as representative oxide semiconductors due to their high mobility. However, their electrical and compositional properties are easily degraded by toxic solution and gases. In order to integrate oxide TFT circuit on TFT back plane, large-area metallization is necessary via back-channel etching process using dry or wet etching method. When oxide channel layer was enclosed under wet-etchants to define the metal-electrodes and -lines, they are facilely ionized and lose pristine electrical performances. Unfortunately, solution-processed oxide semiconductors which include abundant incomplete M-O bonds, organic impurities, and porosities experience dramatic chemical damages under wet-etching process for metal patterning, compared to vacuum processed metal oxide semiconductors. Thus, we need appropriate strategies to enhance chemical durability of oxide semiconductors to fabricate large-area metal-electrodes and -lines via wet-etching process on TFT back-plane Here, we suggest several approaches to make chemically durable solution-processed oxide semiconductor films which consist of strongly bonded metal oxide networks or intrinsically chemically-durable materials. Finally, we could fabricate solution-processed oxide thin-film back channel etched transistors with superior electrical performance, chemical robustness, and low leakage current for large-area oxide TFT circuit integration. |
| 저자 | 윤대호, 조성운, 조형균 |
| 소속 | 성균관대 |
| 키워드 | Oxide semiconductors; Chemically durablity |
