| 학회 |
한국재료학회 |
| 학술대회 |
2014년 봄 (05/15 ~ 05/16, 창원컨벤션센터) |
| 권호 |
20권 1호 |
| 발표분야 |
A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 |
Epitaxial growth of B-doped epitaxial Si film by hot wire CVD |
| 초록 |
We have developed a method of growing thin Si film at 600oC by hot wire CVD using a very-thin large-grained poly-Si seed layer for thin-film Si solar cells. The seed layer was prepared by crystallizing an amorphous Si film by vapor-induced crystallization using AlCl3 vapor. The average grain size of the p-type epitaxial Si layer was about 20 μm and crystallographic defects in the epitaxial layer were mainly low-angle grain boundaries and coincident-site lattice boundaries, which are special boundaries of less electrical activity. Moreover, with decreasing in-situ boron doping time, the mis-orientation angle between grain boundaries and in-grain defects in epitaxial Si decreased. Due to less defects, the epitaxial Si film was high quality evidenced from Raman and TEM analysis. The highest mobility of 360 cm2/V·s was achieved with decreasing in-situ boron doping time. The performance of our preliminary thin-film solar cells with single-side HIT structure and CoSi2 back contact was poor. However, the result showed that the epitaxial Si film can have high potential for good performance with reduced boron doping concentration. |
| 저자 |
강승모1, 안경민2, 문선홍3, 안병태3
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| 소속 |
1Samsung SDI, 2GS caltex, 3KAIST |
| 키워드 |
epitaxial growth; poly-Si; HWCVD
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| E-Mail |
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