| 초록 |
In organic field-effect transistors (OFETs), charge carrier transport and molecular structure of an organic semiconductor are highly influenced by the interface between active layer and gate dielectric. A number of research have been focusing on the interface engineering using self-assembled monolayer (SAM). The SAM treatment, however, is not fully understood in terms of its growth mechanism on polymer gate dielectric. Here, we investigate the growth step of SAM at the different temperatures. The growth temperature control showed the various morphology transitions of the SAM on polymer gate dielectric and also changed the growth mode of the organic semiconductor. The electrical performance of DNTT FETs was improved by the SAM treatment, with mobilities as high as 1.6 cm2/Vs and 0.5 cm2/Vs on the SAM at a low temperature and high temperature, respectively. The enhancement was ascribed to the packing density and orientation difference of the SAM depending on the growth environment. |
