| 학회 |
한국고분자학회 |
| 학술대회 |
2014년 봄 (04/10 ~ 04/11, 대전 컨벤션센터) |
| 권호 |
39권 1호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Solid-Phase doped Graphene on SiC substrate using Pulsed Laser Annealing |
| 초록 |
There have been numerous efforts to improve the performance of graphene-based electronic devices by chemical doping. Most studies have focused on gas-phase doping with chemical vapor deposition. However that requires a complicated transfer process which causes undesired doping and defects by residual polymers. Here, we report a solid-phase synthesis of nitrogen-doped graphene by means of silicon carbide (SiC) substrate including a dopant source driven by pulsed laser irradiation. This novel method provides in situ direct growth of doped graphene on an insulating SiC substrate without a transfer step. Laser-induced solid-phase doped graphene is highly promising for the realization of graphene-based nanoelectronics with desired functionalities. |
| 저자 |
최인성, 최성율, 이건재
|
| 소속 |
한국과학기술원 |
| 키워드 |
Solid-phase synthesis; Nitrogen doped graphene; Laser; Silicon carbide
|
| E-Mail |
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