| 학회 |
한국공업화학회 |
| 학술대회 |
2016년 봄 (05/02 ~ 05/04, 여수 엑스포 컨벤션) |
| 권호 |
20권 1호 |
| 발표분야 |
(나노)나노 반도체 소재 및 소자 |
| 제목 |
Emergence of metallic conduction induced by direct substitutional doping in layered chalcogenide materials |
| 초록 |
Two-dimensional (2D) layered dichalcogenide materials have recently been investigated due to its unique electronic and/or optical properties. For the practical application, the emergence of metallic conduction from layered dichalcogenide semiconductor materials by chemical doping is one of key issues for 2D materials engineering. Here, we report the first occurrence of metallic conduction in the layered dichalcogenide of SnSe2 by the direct Se-site doping with a halogen element as a shallow electron donor. The total carrier concentration up to ~1020 cm-3 is achieved by Cl substitutional doping, resulting in the improved conductivity value of ~170 S·cm-1 from ~1.7 S·cm-1 for non-doped SnSe2. Detailed band structure calculation reveals that the hybridized s-p orbital from Sn 5s and Se 4p states is responsible for the degenerate metallic conduction in electron-doped SnSe2. |
| 저자 |
이기문 |
| 소속 |
군산대 |
| 키워드 |
Two-dimensional material; Metallic conduction; Chemical doping
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| E-Mail |
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