| 초록 |
The graphene on Si Schottky junction solar cells has attracted many interests owing to its quite high power conversion efficiency (PCE) despite of its simple structure and easy fabrication process. Subsequent to the first graphene on Si solar cell (Gr-on-Si SC) with a PCE of 1.5%, fast increase of the PEC has been achieved by increasing the built-in potential via chemical doping and optimal interfacial oxide thickness, ranging up to 12-15%. Such a rapid enhancement of the PEC, yet it is still lower than the best record of the metal/Si Schottly junction solar cells (20 %), illustrates that the junction-potential plays an importance role of the cell performance and there remains lots of room for improvement. In this study, we propose a new type of Si hetero-junction solar cells incorporated with a gate dielectrics and electrode; by applying external electrical field to the solar cell, we have demonstrated near 70-80 % enhancement of the power conversion efficiency. |
