| 학회 |
한국재료학회 |
| 학술대회 |
2016년 봄 (05/18 ~ 05/20, 여수 디오션리조트 ) |
| 권호 |
22권 1호 |
| 발표분야 |
A. 전자/반도체 재료 분과 |
| 제목 |
Black phosphorus vertical tunnel diode formed by homogeneous p+-n+ junction by using chemical doping |
| 초록 |
Ultrathin body 2D crystals are receiving significant attention because of their great potential to enable efficient electrostatic modulation and therefore low voltage operation, so that ultra-low power semiconductor technology can be realized. For the first time in this work, van der Waals layered structure based vertical tunneling diodes are fabricated using single material homojunctions which achieve very high on-state current. Here, we demonstrate room temperature quantum mechanical tunneling and negative differential resistance from the homogeneous p+-n+ junction which was fabricated by differentially and chemically doping few-layer 2D crystal of BP with thickness down to 50 nm. |
| 저자 |
Daeyeong Lee1, Young Dae Jang2, Jaehwan Kweon3, Dewu Yue4, Euyheon Hwang5, Won Jong Yoo6
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| 소속 |
1Department of Nano Science and Technology, 2SKKU Advanced Institute of Nano-Technology (SAINT), 3Sungkyunkwan Univ. (SKKU), 42066 Seoubu-ro, 5Jangan-gu, 6Suwon |
| 키워드 |
Black phosphorus; tunnel diode; Esaki diode; chemical doping; negative differential resistance
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| E-Mail |
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