| 초록 |
Conventional p-type chemical graphene doping using inorganic small molecules (e.g., HNO3, AuCl3) have suffered from drastic increase of sheet resistance (Rsh) in ambient condition, and the work function (WF) of the p-doped graphene was relatively low. Desirable graphene doping should meet requirements such as i) high optical transparency, ii) high electrical conductivity, iii) high work function, iv) doping stability, and v) flat surface simultaneously. We report macromolecular chemical p-type graphene doping using a perfluorinated polymeric sulfonic acid (PFSA) to achieve extremely high doping stability of graphene electrode. P-doped graphene with polymeric acid showed dramatic increase of surface WF and stably maintained its low Rsh in ambient condition for a very long time. We also fabricate high-efficiency organic light-emitting diodes with the PFSA-doped graphene anode, and it exhibited lower operating voltage and higher luminous efficiencies than those with pristine graphene. |
