| 초록 |
Two dimensional TMDs, which are mechanically flexible and electronically highly tunable, offer the potential for new types of applications including flexible optoelectronics, and electronics devices. In this presentation, we demonstrate the preparation of p-type TMDs including layered tungsten diselenide (WSe2) and optoelectronics application using single-source precursors. We firstly demonstrate the simple and facile preparation of WSe2 layers using a newly developed precursor that allows improved dispersibility and lower decomposition temperature. An appropriate solution is suggested for preparing continuous and stoichiometric WSe2 layers with spatial homogeneity at the temperature of 600 °C. It is also demonstrated that the MoS2‐based visible‐light and IR light photodetector are fabricated on 300 nm-thick SiO2/Si with 100 nm-thick Au electrodes. The resulting chemical and structural exploration of solution-processed WSe2 layers suggest, that the (CTA)2[WSe4] may be a promising precursor because it resulted in the formation of high-crystalline WSe2. Besides, this study verifies the capability of WSe2 layers for multifunctional applications in optoelectronic and electronic devices. The photocurrent of WSe2-based photodetectors shows an abrupt switching behavior under periodic illumination of visible or IR light. The extracted photoresponsivity values for WSe2-based photodetectors recorded at 0.5 V correspond to 26.3 mA/W for visible light and 5.4 mA/W for IR light. The WSe2-based field-effect transistors exhibit unipolar p-channel transistor behavior with carrier mobility of 0.45 cm2/ V∙s and an on-off ratio of ~10. |
