| 학회 |
한국화학공학회 |
| 학술대회 |
2014년 가을 (10/22 ~ 10/24, 대전 DCC) |
| 권호 |
20권 2호, p.1906 |
| 발표분야 |
재료 |
| 제목 |
Atomic layer deposition of amorphous MoS2 thin film for hydrogen evolution catalysis |
| 초록 |
Recently MoS2 has attracted great attention as an electrochemical catalyst for hydrogen evolution reaction (HER). Especially the amorphous phase of MoS2 has been proved to be highly active for the HER. In this work, the amorphous MoS2 thin films are grown at 100 oC on Au/Si or SiO2/Si substrates by atomic layer deposition (ALD). The ALD-grown MoS2 shows characteristic Raman modes for in-plane and out-of plane vibrations of the MoS2 layer, although the film is amorphous in X-ray diffraction and transmission electron microscopy. Electrical conductivity of the amorphous MoS2 is evaluated to be comparable to that in the parallel direction to the MoS2 layers of crystalline phase. The amorphous film on Au substrate shows an excellent turnover frequency per active site for the HER. Here we discuss the origin of the high activity of the amorphous MoS2 and the mechanism of the HER. |
| 저자 |
Zhenyu Jin, 신석희, 권도현, 한승주, Ranjith Bose, 민요셉
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| 소속 |
건국대 |
| 키워드 |
MoS2; amorphous; atomic layer deposition; hydrogen evolution
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| E-Mail |
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| 원문파일 |
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