초록 |
Recently, formamidinium lead bromide (FAPbBr3)-based perovskites have demonstrated excellent advances in optoelectronics due to the smaller bandgap and intrinsically good semiconducting properties. In this work, FAPbBr3 perovskite nanocrystal (PeNCs) films were passivated by phenethylammonium bromide (PEABr) via facile spin-coating method. The resulting PeLEDs showed an improved external quantum efficiency (EQE) from 1.5% (pristine) to 5.2% after PEABr passivation. Meanwhile, the turn-on voltage of PeLEDs reduced from 4 V to 3.1 V. More importantly, the devices demonstrate green electroluminescence (EL) peak at 533 nm, with a full-width at half-maximum (FWHM) of 24 nm, corresponding to Commission Internationale de I’Éclairage (CIE) coordinates of (0.20, 0.75), approaching those of Rec. 2020 specified green primary color. In conclusion, PEABr surface passivation demonstrated herein is a facile and efficient approach to boost the performance of FAPbBr3-based PeLEDs. |