| 학회 |
한국고분자학회 |
| 학술대회 |
2018년 봄 (04/04 ~ 04/06, 대전컨벤션센터) |
| 권호 |
43권 1호 |
| 발표분야 |
분자전자 부문위원회 I |
| 제목 |
Solution-processed metal-oxide semiconductor field-effect transistors with polymeric gate dielectric |
| 초록 |
Solution-processed metal-oxide thin-film transistors (TFTs) with polyimide gate dielectric were fabricated. The poly(amic acid) solution was spin-coated and annealed at 250℃ with nitrogen purging for thermal imidization. The surface of the polyimide film was modified by using oxygen plasma treatment. In2O3 film was deposited on the polyimide gate dielectric-coated ITO/glass substrate by spin-coating from aqueous indium nitrate hydrate precursor solution, followed by a 250℃ annealing process. The electrical performance of the In2O3 thin-film transistors was investigated in detail. In addition, a simple load-type inverter was constructed by connecting a load resistance to evaluate the applicability of the device in a logic circuit. |
| 저자 |
박준용, 터르쇼이 게르게이, 표승문
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| 소속 |
건국대 |
| 키워드 |
metal oxide; polymeric gate dielectric; polyimide; solution process
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| E-Mail |
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