| 학회 |
한국재료학회 |
| 학술대회 |
2007년 봄 (05/10 ~ 05/11, 무주리조트) |
| 권호 |
13권 1호 |
| 발표분야 |
전자재료 |
| 제목 |
UV-O3 surface modification effects on the nucleation behavior of atomic-layer-deposited Ru film on low-k dielectric |
| 초록 |
The UV-O3 treatment effects on the structural properties of low-k films as a function of the treatment time were investigated in this study. The thickness of the samples proportionally decreased with the surface treatment time due to highly reactive nature of ozone and the process gradually modified surface layer more SiO2-like. Excessive treatment of longer than 60 s adversely affected underlying low-k film, increasing the dielectric constant. The nucleation of Ru on 450 °C annealed low-k film suffered from poor nucleation problem and particle-like Ru was formed. After the UV-O3 treatment for the optimized time of 60 s, the difficulty was resolved and fully-covered Ru layer on low-k film was obtained without any harmful effect on underlying dielectric. |
| 저자 |
허재영, 엄다일, 김형준
|
| 소속 |
서울대 |
| 키워드 |
low-k; UV-O3; surface modification; Ru; diffusion barrier
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| E-Mail |
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