| 학회 | 한국재료학회 |
| 학술대회 | 2011년 가을 (10/27 ~ 10/29, 신라대학교) |
| 권호 | 17권 2호 |
| 발표분야 | B. Nanomaterials and Processing Technology(나노소재기술) |
| 제목 | Amorphous carbon films on Ni using with CBr4 by thermal atomic layer deposition |
| 초록 | We deposited the carbon films on Ni substrates by thermal atomic layer deposition (th-ALD), for the first time, using carbon tetrabromide (CBr4) precursors and H2 reactants at two different temperatures (573 K and 673 K). Morphology of carbon films was characterized by scanning electron microscopy (SEM). The carbon films having amorphous carbon structures were analyzed by X-ray photoemission spectroscopy (XPS) and Raman spectroscopy. As the working temperature was increased from 573 K to 673 K, the intensity of C1s spectra was increased while that of O1s core spectra was reduced. That is, the purity of carbon films containing bromine (Br) atoms was increased. Also, the thin amorphous carbon films (ALD 3 cycle) were transformed to multilayer graphene segregated on Ni layer, through the post-annealing and cooling process. |
| 저자 | 최태진, 강혜민, 윤재홍, 정한얼, 김형준 |
| 소속 | 연세대 |
| 키워드 | Atomic layer deposition; Amorphous carbon; Carbon tetrabromide; Graphene |
