| 초록 |
The ferroelectric PVDF-TrFE(poly(vinylidene fluoride-co-trifluoroethylene) is usually used for the FeFET(Ferroelectric-gate field-effect transistors) as gate insulator. Although it has high remenent polarity, bistablity and other advantages, the low curie temperature make it have low thermal stability. For this reason, the PVDF(poly(vinylidene fluoride)) which has high curie temperature and low manufacturing cost has received attention these days. However, the PVDF has paraelectric α-phase as the most stable phase, thermodynamically, and high roughness. Here, we fabricate FeFET using PVDF with low roughness and ferroelectric phase by spin coating at elevated temperature for high temperature operation non-volatile memory. |
