| 학회 |
한국고분자학회 |
| 학술대회 |
2018년 봄 (04/04 ~ 04/06, 대전컨벤션센터) |
| 권호 |
43권 1호 |
| 발표분야 |
분자전자 부문위원회 I |
| 제목 |
Solution processed oligomeric polyurea gate insulator with hydrogen bond for low-voltage operation of flexible organic thin-film transistors |
| 초록 |
We report on the fabrication of polyurea (PU) gate insulator capable of solution process for low-voltage operation and high performance organic thin-film transistors (OTFTs). We synthesized solution-processable polyurea by precisely controlling hydrogen bonding through molecular design and molecular weight. A 60 nm-thick PU thin film exhibited high dielectric constant of 5.82 and excellent electrical insulating properties. To investigate the potential of the PU thin film as a gate insulator, we fabricated flexible dinaphtho[2,3-b:20,30-f]thieno[3,2-b]thiophene (DNTT) OTFTs. The DNTT TFTs with the 60 nm-thick PU gate insulator showed excellent TFT performance with a field-effect mobility of 1.390 cm2/Vs and an on/off ratio of 5.84x105 at a low operation voltage below 3V. In addition, the mobility of DNTT TFTs significantly improved with simple metal-oxide assisted surface treatment on PU gate insulator. These flexible TFT devices were successfully operated after 1000-times bending test. |
| 저자 |
유성미1, 김윤호1, 김동균1, 원종찬1, 장광석2, 하태욱1
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| 소속 |
1한국화학(연), 2UST |
| 키워드 |
gate insulator; OTFT; polyurea
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| E-Mail |
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