| 초록 |
The p-i-n (p-doped/intrinsic/n-doped) organic light-emitting diode (OLED) structures are of great technological importance for the realization of next-generation flat-panel displays and solid-state lightings due to their characteristics of low driving voltage, high efficiency, and long lifetime. In this work, we report high efficiency green phosphorescent p-i-n OLEDs with very unique metal oxide-doped charge transporting layers such as ReO3-doped hole transporting layer (HTL) and Rb2CO3-doped electron transporting layer (ETL). The device characteristics vary depending on the change of p-doping ratio in HTL and thickness of n-ETL, exhibiting very high external quantum efficiency of 19.2%, power efficiency of 76 lm/W, and low operation voltage of 3.1 V at 100 cd/m2. Furthermore, two stacked p-i-n OLEDs are also fabricated and showed significantly high efficiency of ~36%. Details about the electrical connection units in two stacked p-i-n OLEDs are further described. |
