| 초록 |
The development of high performance metal oxide semiconductor (MOS) gas sensor for volatile organic compound (VOC) is the important topics in gas sensor research. In this study, Fabrication of a patterned p-n type polycrystalline bi-metal oxide semiconductor (bi-MOS) nanowire with an ultrathin, high aspect ratio (~20) structure composed of ultra-small grains (~5 nm) is achieved to enhance the VOC gas-sensing performance of MOS gas sensor. A high-resolution polycrystalline p-n type bi-MOS nanowire array has been fabricated by secondary sputtering via Ar+ bombardment. Various p-n type nanowire arrays (WO3/CuO, WO3/NiO, WO3/Cr2O3 etc.) were easily fabricated by simply changing the sputtering material. The high resolution and small grain size of p-n type bi-MOS nanowire, which lead to overlap of fully depleted zones may exhibit high sensitivity as well as faster response or shorter recovery time. Also, the formation of p-n junction enhances the base resistivity by extension of depletion layer. This p-n junction combined with high resolution and small grain size of bi-MOS nanowire may lead extreme enhancement of sensitivity toward VOC. |
