| 초록 |
For intelligent and wearable electronics of the future, printed organic memories should be provided for large-area, low-cost, and light-weight forms as well as high performance. However, reported memories are difficult to apply in future intelligent electronics due to their low memory density, low static noise margin, and high operating voltage. Here, we propose a three-dimensional (3-D), flexible, and printed static random-access memory (SRAM) based on complementary organic thin-film transistors (TFTs). The 3-D SRAM exhibited the smallest area of 2.1 mm2, the highest normalized static noise margin of 62%, and the maximum gain of 16.8 V/V compared to reported values of organic SRAM. This high-performance complementary organic thin-film transistors-based SRAM shows its high application potential in large-scale and low-cost wearable intelligent electronics for data storage and processing. |
